Interactions of Hydrogen Atoms with Acceptor–Dioxygen Complexes in Czochralski‐Grown Silicon

It is debated in the silicon PV community whether or not presence of hydrogen essential for permanent suppression (“regeneration”) recombination activity boron–oxygen (BO) defect, which responsible light-induced degradation (LID) solar cells produced from B-doped oxygen-rich silicon. The BO-LID defect has been identified as a BsO2 complex negative-U properties. This study focuses on interactions with to elucidate regeneration mechanism. With use junction spectroscopy techniques, changes concentration donor state diodes are fabricated Czochralski-grown (Cz) Si and subjected hydrogenation subsequent heat treatments have monitored. found that annealing hydrogenated Cz-Si:B temperature range 398–448 K under application reverse bias (RBA) results nearly total disappearance defect. argued electrically neutral BsO2–H complexes formed upon RBA treatments. According ab initio calculations, binding energy H+ BsO2− exceeds Bs− by at least 0.1 eV, resulting inactive.